Abstract
Electron spin resonance analysis has detected a P-donor related point defect in nanometer-thick HfO2 films on (100)Si after annealing in the range of 500–900°C. Based on the principal g matrix (axial; g‖=1.9965; g⊥=1.9975) and hyperfine tensor values (A1=1425±10G, A2=1245±10G, and A3=1160±10G) inferred from consistent K- and Q-band spectrum simulations, the center is assigned to a P2-type defect—a P substituting a Hf atom—similar to P2 in silica, where the unpaired spin is strongly localized on the P atom. The annealing impact is linked to the onset of crystallization enabling substitutional positioning of the P impurities. The centers may act as detrimental charge trapping sites.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
