Numerical Simulation of Silicon Heterojunction Solar Cells Featuring Metal Oxides as Carrier-Selective Contacts

Abstract

The applicability of different high (low) work function contact materials for the formation of alternative passivating and hole (electron) selective contacts is currently re-explored for silicon solar cells. To assist the engineering of those contacts, which is still in its infancy, numerical device simulations are used to improve knowledge regarding relevant heterojunction and thin film properties with the focus on metal oxide based hole contacts. The importance of 1) a high metal oxide work function for the induced c-Si pn-junction is shown. It is elucidated that for an efficient hole transport from this induced c-Si junction into the external electrode, via the buffer and the metal oxide, 2) the metal oxide's conduction band must be below the valence band of the buffer (or c-Si absorber) for direct band-to-band tunneling, or 3) bulk traps near the valence band edge of the buffer (or c-Si absorber) are needed for trap-assisted tunneling.