Abstract
Abstract In this work, we perform a numerical modeling of silicon thin film deposition for a photovoltaic application in a capacitive coupled plasma reactor (CCP) using RF excitation. Plasma equations are solved by finite element numerical method. The deposition is done by plasma of SiH4/Ar/H2 in low pressure and low temperature. The results provide the fundamental features of plasma discharge such as density, temperature and electrical potential. It is shown that the gas mixture used covers a large energy range, which entails a high deposition rate. Furthermore, the use of CCP reactor yields a uniform deposition without surface deterioration.
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