Abstract
This paper simulated the Atomic Layer Deposition process in the reactor scale using ANSYS® Fluent® 19.1 and ChemKin-PRO commercial packages to solve transport and chemistry equations. A 2D hot-walled isothermal viscous-flow ALD reactor was considered at a temperature of 473 K. Trimethlyaluminum and ozone were used as precursor A and reactant B respectively to obtain alumina. Various pulse deposition strategies of supercycles were modeled to enhance the surface reactions. They have been demonstrated to effectively prevent temporary steric hindrance and assist with saturation for self-limiting adsorption. The numerical model of each precursor dose, as short pulses, was modeled for multiple numbers of cycles x (x > 1, x ∊ I). Compared to the conversational binary reaction (ABx deposition), there was an increase with growth per cycle of 0.44–1.13 nm/cycle range of outcome of all the supercycles strategies.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
