Abstract
In this paper, a comparative study between four OLEDs devices is carried out. The bi- layers device (A) (consists of) Hole Injection Layer (HIL)/Electron Transport Layer (ETL), the multilayer device (B) (consists of) HIL Layer/Hole Transport Layer (HTL)/ETL Layer. The influence of the hole transporting material on the performance of the three layers OLEDs was investigated. Three different HTL materials were used: α- NPD, TAPC and p-TTA with the same electron transporting material as Alq3; (these holes transport material consists the devices (B), (C) and (D) respectively). The carrier injection, Langevin recombination rate, singlet exciton density and the power of luminescent are demonstrated. The simulation results shows that the insertion of a thin HTL layer between HIL and ETL layers increases the characteristics of the device (B)as: 6.19.1025 cm-3s-1 of the Langevin recombination rate, 1.16.1015cm-3 of the singlet exciton density and 0.04232 W/μm2 of the luminescence power. Moreover, the insertion of TAPC as HTL material gives rise to 1.36.1026 cm-3s-1 of the Langevin recombination rate, 2.1015cm-3 of the singlet exciton density and 0.075 w/μm2 of the luminescence power.
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