Abstract
In present research, current-transport mechanism in future generation devices like Schottky diodes under highly sensitive temperature was investigate through the mathematical approach. Typical thermionic emission model and Cheung function were taking into account for analysis of transportation mechanism in a Schottky diode in forward bias. Different electrical parameters were calculated for analysis of temperature variation effect. Simulation of electrical parameters was performed via MATLAB under the sensitive temperature range from 300K-1000K. Obtained results showed that barrier height and ideality factor are strongly temperature dependent. The barrier height was inversly proportional while the ideality factor was directly proportional to the temperature.
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