Abstract
A previously developed numerical method for calculating the radiation-induced creep rate [Yu. S. Pyatiletov and A. D. Lopuga, Tech. Phys. 45 (1999)] is used to study the influence of impurity atmospheres around dislocations and pores, impurity traps, and mobile impurity-vacancy and impurity-interstitial complexes on the radiation-induced strain rate of interstitial alloys. Quantitative data are obtained on the creep rate as a function of impurity concentration, and a physical interpretation allowing for the recombination of interstitial atoms and vacancies directly with one another, on impurity traps, and on mobile complexes is put forward.
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