Numerical Analysis of Thickness Uniformity Improvement with Different Inlet Plate Numbers during APCVD Process

Abstract

As the nanometer line width in the semiconductor industry further shrinks, the surface flatness requirements for atmospheric pressure chemical vapor deposition epitaxial silicon films have further increased. Through a series of numerical simulations, this study analyzes the use of inlet plates to solve the problem of uneven wafer thickness during atmospheric pressure chemical vapor deposition. The results show that without the inlet plate, the deposition rate is lower at the center of the wafer and higher at the edge of the wafer. Wafer epitaxy thickness uniformity can be improved when inlet plates are used. By adjusting the position of the inlet plates, this unevenness can be further improved. As the number of inlet plates increases from 0 to 3, the wafer thickness non-uniformity decreases from 12.5% to 1.8% respectively. When the number of inlet plates continues to increase, the thickness uniformity of the wafer can be further improved. When the number of inlet plates is 5, the thickness unevenness of the wafer reaches 0.7%.