Abstract
The effects of accelerated crucible rotation technique (ACRT) and dynamic translation on liquid phase diffusion (LPD) growth of SixGe1−x single crystals have been separately investigated numerically in earlier works and were found to have a very positive impact on the LPD growth process. Building upon these findings, in this paper, we study the consequences of imposing both ACRT and dynamic translation on this growth technique. Time-dependent, axisymmetric numerical simulations using moving grid approach have been carried out using finite volume code Ansys Fluent. Crucible translation effect is simulated using dynamic thermal boundary condition. Results are compared to the case in which this growth system is subjected to ACRT only. It is predicted that by combining ACRT with dynamic pulling, excellent axial compositional uniformity can be achieved and growth rate can be improved substantially without significantly compromising on the benefits of employing ACRT. The results show that it is advantageous to utilize the combination of ACRT and dynamic translation during LPD growth rather than using them independently for producing relatively uniform composition SixGe1−x single crystals in a shorter span of time.
Highlights
Six Ge1−x is an upcoming alloy semiconductor material that is gaining prominence because its properties can be adjusted as per the needs of a particular application [1]
A large body of work exists in the literature studying the effects of accelerated crucible rotation technique (ACRT) experimentally and numerically on the melt and solution growth techniques, and it has been found in many studies that the application of ACRT leads to an improvement in the melt mixing, growth rate, radial compositional uniformity, and solid/liquid interface flattening
Motivated by the positive effects of dynamic translation and ACRT on the Liquid phase diffusion (LPD) growth, in this work, we have investigated the impact of the combination of ACRT and dynamic pulling numerically
Summary
Six Ge1−x is an upcoming alloy semiconductor material that is gaining prominence because its properties can be adjusted as per the needs of a particular application [1]. Numerical simulation results showed that by translating the crucible in a dynamic fashion the interface temperature could be maintained at a nearly constant value and uniform axial crystal composition could be achieved. A large body of work exists in the literature studying the effects of ACRT experimentally and numerically on the melt and solution growth techniques (see for instance [11,12,13,14,15,16,17,18,19,20,21]), and it has been found in many studies that the application of ACRT leads to an improvement in the melt mixing, growth rate, radial compositional uniformity, and solid/liquid interface flattening. The simulation results reveal that by superimposing dynamic translation on ACRT, the uniform axial composition can be achieved with a significant improvement in the growth rate while retaining the key advantages of using ACRT
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