Numerical analysis of silicon-based horizontal multiple-slotted waveguides with slanted sidewalls

Abstract

A silicon-based horizontal multiple-slotted waveguide with slanted sidewalls is analyzed by using a full-vectorial mode solver based on the finite element method. The results show that the mode classification of the present waveguide structures is different from that of the conventional ones (e.g., typical rib waveguides, optical fibers), both symmetric and anti-symmetric fundamental (and higher-order) quasi-TE and quasi-TM modes exist due to the strong coupling of high-index silicon layers. The field distributions, effective indexes, and optical field confinement factors, both in quasi-TE and quasi-TM modes, as functions of the top width and sidewalls angle of the waveguides, and the refractive index and thickness of the slots are investigated in detail, where the single-mode regime, non-birefringence condition, and maximum optical confinement factor are obtained. From the numerical results, a single-mode waveguide structure for fundamental symmetric quasi-TM modes with the power confinement factor of 80% and the normalized power density of 120μm−2 is achieved.