Abstract
The nucleation and growth processes of GaAs molecular-beam epitaxy were studied by Monte Carlo simulation. The migration of Ga adatoms on the 2 × 4 GaAs (001) surface is anisotropic which has a great effect on the growth kinetics of GaAs. The density of islands and the density of isolated Ga adatoms were obtained for different growth temperatures at first. The island size distribution at low coverage was also studied. Finally, the correlation function between atoms was studied which directly shows the great anisotropy of the growth process. The correlation function shows that the Ga adatoms are depleted around islands.
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