Abstract
Nuclear reaction channeling (NRC) provides a tool for the investigation of concentration and lattice location of impurities in a crystal. In this work NRC is applied to the analysis of light element impurities (B, C, N, O) in semiconductor materials (GaAs, Si). Depending on the nuclear reaction used for the investigation, concentrations below 100 ppma are analysed. The channeling angular scans in different crystalline directions allow to specify the site of the impurities up to a range of the thermal vibration amplitude of the host crystal. These results are deduced from the MABIC simulation code.
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