Abstract
A technique for SiO/sub 2/ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO/sub 2/ film with a lower P-etch rate shows a dense structure. LPD SiO/sub 2/ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO/sub 2/ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs). >
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