Abstract
The prototypical ferromagnetic semi-conductor (Ga,MnAs) is interesting for spintronics devices, largely because of its rich magnetic and transport anisotropy. The lack of local anisotropy control has until recently limited device options to structures where all elements have the anisotropy characteristic of the parent layer. We describe here a novel approach to anisotropy control using lithographically engineered strain relaxation. By patterning the layer to create local strain relaxation, we allow for a controlled deformation of the crystal. The strong spin orbit coupling then leads to a new anisotropy term that can be independently tuned for each element of a compound device. We use this technique to demonstrate a novel non-volatile memory element.
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