Abstract
The aim of this study was to develop a novel, simple and fast route to prepare ZnO nanorods (NRs) -Au nanoparticles (NPs) hybrids directly supported on a substrate to be used in gas sensor devices. The ZnO NRs were promptly grown on interdigitated Au electrodes Al2O3 substrates by chemical bath deposition at a low temperature. After that, Au NPs were deposited by sputtering. Results obtained by XRD, SEM, EDX and TEM showed the perpendicularly aligned growth of the ZnO NRs with a hexagonal base on the substrate and the Au NPs homogeneously covered the ZnO NRs surface. The ZnO NRs-Au NPs hybrids-based sensor exhibited an improved sensor response for H2 and O2 gases compared to the ZnO NRs at 300 oC. Due to the ability to prepare homogeneous hybrids with high surface directly supported on the substrate; the developed route might provide a convenient approach to preparing gas sensor devices.
Highlights
In the last decades, ZnO semiconductor nanostructures have drawn significant attention, mainly for their promising potential in the development of gas sensors[1,2,3,4]
We report a simple and fast route, just using two steps, for producing ZnO nanorods (NRs) arrays- Au nanoparticles (Au NPs) hybrids directly supported on alumina substrates with interdigitated comb-like gold electrodes
We investigate the enhanced resistance response of ZnO NRs-Au NPs hybrids-based sensor to H2 and O2 gases
Summary
ZnO semiconductor nanostructures have drawn significant attention, mainly for their promising potential in the development of gas sensors[1,2,3,4]. The functioning of gas sensors is embedded in the changes in electrical conductivity due to adsorption / physisorption (van der Waals forces) or chemisorption (covalent bonds) processes. Electrical conductivity may change due to reversible electrostatic attractions of reactive gases on the ZnO surface. The mechanism responsible for the semiconductors' sensitivity to gas is driven by the electrical and chemical activity of the oxygen vacancies found on the oxide surface[5]. Despite the extensive researches made about using ZnO semiconductor as gas sensors, there are still issues with long response time, slow and incomplete recovery time and low sensitivity[6]. It is well known that semiconductor oxide processing is the key to enhance gas sensor's performance. Au NPs have widely been used in ZnO NRs as plasma resonance to enhance the performance of ultraviolet photodetectors[3,4,5,6,7,8,9,10,11,12,13,14,15,16]
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