Novel Radiation-Hardened High-Speed DFF Design Based on Redundant Filter and Typical Application Analysis

Abstract

A cell-level radiation hardening by design (RHBD) method based on commercial processes of single event transient (SET) and single event upset (SEU) is proposed in this paper, in which new radiation-hardened D-type flip-flops (DFFs) are designed. An application-specific integrated circuit (ASIC) of a million gates level is developed based on DFFs, and SEU and single event functional interruption (SEFI) heavy-ion radiation tests are carried out. The experimental results show that the new DFF SEU ability is increased by 63 times compared with the DICE-designed DFF, and is three orders of magnitude higher than the redundantly designed DFF. The SEFI ability of the ASIC designed by the new DFF is 2.6 times higher than the circuit hardened by the TMR design.