Abstract
With the aid of a two-dimensional thermal-electrical model, the thermal stability of multi-finger power heterojunction bipolar transistors (HBTs) with uniform segmented emitter, and non-uniform segmented emitter are studied. It shows that both of them could lower the peak temperature and improve the non-uniformity of the collector current density distribution, and thus improve the thermal stability, compared with an HBT which has traditional non-segmented emitter structure. At the same time, the improvement capability of thermal stability for HBT with non-uniform segmented emitter is superior to that of HBT with uniform segmented emitter, ascribing to selectively divide the emitter fingers into various segments according to the difference of heat dissipation capability in emitter fingers. Furthermore, the improvement capability of thermal stability for HBT with non-uniform segmented emitter is enhanced exponentially as segment spacing increases. However, for HBT with uniform segmented emitter, the ability is less sensitive to the increasing of the segment spacing as it exceeds 6μm. Therefore, the technique of non-uniform segmented emitter is a better method for enhancing the thermal stability of power HBTs.
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