Abstract
In this work we propose an analytical expression for the complex dielectric function which includes both discrete and continuum exciton effects. We have introduced Lorentzian broadening into Elliott’s formula. The introduction of broadening leads to equations for the dielectric function containing only elementary functions. We have applied the proposed model to the dielectric function of wurtzite GaN in the spectral region 1–10 eV. Excellent agreement with the experimental data has been obtained. We show that the Lorentzian-broadened dielectric function decays more slowly than the experimental data for hexagonal GaN at the low-energy side. This indicates that the broadening of the absorption edge in GaN is not purely Lorentzian. The agreement with the experimental data can be improved using adjustable broadening modification.
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