Abstract
Novel high power supply rejection ratio (PSRR) high-order temperature-compensated subthreshold metal-oxide-semiconductor (MOS) bandgap reference (BGR) is proposed in Semiconductor Manufacturing International Corporation (SMIC) 0.13 μm complementary MOS (CMOS) process. By adopting subthreshold MOS field-effect transistors (MOSFETs) and the piecewise-curvature temperature-compensated technique, the output reference voltage's temperature performance of the subthreshold MOS BGR is effectively improved. The subthreshold MOS BGR achieves high PSRR performance by adopting the technique of pre-regulator. Simulation results show that the temperature coefficient (TC) of the subthreshold MOS BGR is 1.38×10−6/°C when temperature is changed from −40 °C to 125 °C with a power supply voltage of 1.2 V. The subthreshold MOS BGR achieves the PSRR of −104.54 dB, −104.54 dB, −104.5 dB, −101.82 dB and −79.92 dB at 10 Hz, 100 Hz, 1 kHz, 10 kHz and 100 kHz respectively.
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