Abstract
Novel charge pumping circuits for low supply voltages utilizing N-MOSFET's or P-MOSFET's with capacitors to generate positive and negative boosted voltages are presented. The two major factors limiting the pumping gain and efficiency are the body effect and the threshold voltage. Two techniques are proposed to minimize the influence of them. One is the new substrate connected technique to eliminate the body effect. The other one is the small pumping circuit providing higher gate voltages for the major pumping circuit to enhance pumping gain. With these two new techniques, the new pumping circuits have high positive and negative boosted voltages at low supply voltages.
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