Novel gap filling technique of shallow trench isolation structure in 16/14 nm FinFET using sub-atmospheric chemical vapor deposition

Abstract

This work presents a novel process to fill shallow trench isolation (STI) in 16/14 nm FinFET structure using sub-atmospheric chemical vapor deposition (SACVD) technique. The effect of post-annealing on the gap filling was also investigated. After the post-annealing treatment, the density of the film has been significantly increased. The processed devices with optimized parameters show void-free SACVD. Proper Si-Fin loss can be accomplished in a multi-step annealing process which was validated by technology computer-aided design (TCAD) simulations and real post deposition annealing (PDA) experiments.