Novel CeO2@MOF and its derived abrasives for rapid chemical mechanical polishing

Abstract

In recent years, with the reduction of the feature size of integrated circuits and the improvement of chip integration, the polishing performance of CeO2 abrasives is required to be of higher quality. The factors that influence the polishing properties of CeO2 abrasives typically include morphology, dispersion, crystallinity, and chemical activity. In this study, spherical CeO2@MOF composite was synthesized utilizing a simple one-step method, and CeO2 particles with identical morphology were synthesized using this material as the precursor. Compared with CeO2 nanoparticles, CeO2@MOF composites exhibited lower crystallinity and dispersibility, but higher concentrations of Ce3+ and oxygen vacancy, indicating higher chemical activity. When the two abrasives were used in CMP experiments on silicon oxide wafers, the material removal rate (MRR) of CeO2@MOF was 36.35 ± 3.9 nm/min, which is 50.2 % higher than that of CeO2 nanoparticles, and the surface roughness was as low as 0.141 nm, which was 22 % lower than that of CeO2 nanoparticles. According to the results of CMP, compared with the enhancement of physical properties such as crystallinity and dispersion, the improvement of chemical properties can enhance the polishing performance of cerium-based abrasives. This study presents a novel approach for the synthesis and application of cerium oxide abrasives.