Abstract
Nonvolatile transistor memories (NVTMs) are fabricated based on a polymer blend dielectric containing poly(pentafluorophenyl acrylate) (pPFPA) and branched-poly(ethylene imine) (bPEI). Detailed studies reveal this dielectric not only exhibits a high dielectric constant (k = 285 at 20 Hz), apparent polarization hysteresis, and robust mechanical properties but also endows a transistor (PBTTT-C14 as semiconductor) with ultrahigh mobilities (7.5 cm2 V–1 s–1) and on/off ratios (107). By virtue of this, NVTMs possessing an eight-level storage capability at low operating gate voltages are demonstrated, with good data retention and endurance of over 105 s and 100 cycles, respectively. More importantly, the drain current can also be well controlled by the gate voltage pulse width, leading to NVTMs with two-dimensional (voltage and time) storage capability. Further, the application of the NVTMs to data recording, encryption, and protection is demonstrated, with a desirable security feature, opening the door to NVTMs with higher performance.
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