Abstract
It is demonstrated that notable resistive switching memory properties dependingon voltage polarity (i.e. bipolar switching properties) can be obtained from thelayer-by-layer (LbL) assembled multilayers based on transition metal oxidesand metal nanoparticles. Cationic poly(allylamine hydrochloride) and anionictitania precursor layers were deposited alternately onto Pt-coated Si substratesusing an electrostatic LbL assembly process. Anionic Pt nanoparticles (PtNP) with about 5.8 nm diameter size were also inserted within the multilayers usingthe same interactions mentioned above. These multilayers were converted toPtNP-embeddedTiO2 films by thermal annealing and the films were then coated with a topelectrode. When external bias was applied to the devices, bipolar switchingproperties were observed at low operating voltages showing the highON/OFF ratio(>104) and the stable device performance. These phenomena were caused by the presence ofPtNP inserted within TMO films.
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