Abstract
Epitaxial NdFeO3–PbTiO3 (NFPTO) thin films were fabricated on Nb–SrTiO3(100) (NSTO) substrates of about 300 nm thickness by a sol–gel process. Nonvolatile bipolar resistive switching has been observed in the Pt/NFPTO/NSTO structure. The resistance ratio between the high-resistance state and the low-resistance state is about one order of magnitude. After degenerating for several minutes, each memory state is stably maintained and no further degradation occurs over 15000 s. X-ray photoelectron spectroscopy results suggest that the oxygen vacancies acting as trapping centers in the films play a significant role in the resistive switching mechanisms. Analysis of the current–voltage relationship demonstrates that the trap-controlled space-charge-limited current mechanism is of considerable importance to the resistance switching.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
