Abstract
We have calculated the contribution of intersubband transitions to the nonresonant third-order optical nonlinear susceptibility. It is shown that partial quantum confinement, rather than the band nonparabolicity, is responsible for high values of intersubband nonlinearity. The effects of finite barrier height, energy-band nonparabolicity, and energy-dependent effective mass are included. As examples, we consider InAs/AlSb, GaInAlAs/AlInAs, and GaAs/GaAlAs quantum wells.
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