Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard-switching performances evolution

C.O Maiga,H Toutah,B Boudart,B Tala-Ighil

doi:10.1109/epe.2005.219370

Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard-switching performances evolution

C.O Maiga, H Toutah + Show 2 more

https://doi.org/10.1109/epe.2005.219370

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Publication Date: Jan 1, 2005

#High Temperature Reverse Bias #High Temperature Gate Bias + Show 8 more

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Abstract

The work presented in this paper is concerned with the effects of a high temperature gate bias (HTGB) and a high temperature reverse bias (HTRB) stresses on non-punch-through IGBTs. The stresses were achieved during 1200 hours at 140degC. A particular interest was taken in the parameters related to the switching mode operation and experimental results on their evolution under the two types of stress are presented in a quantified way. A qualitative analysis of the switching times effects, due to the IGBTs ageing, on a pulse width modulation (PWM) inverter operation is presented

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