Abstract
Data are presented on nonplanar index-guided quantum well heterostructure periodic laser arrays grown by metalorganic chemical vapor deposition (MOCVD). The nonplanar array structure, formed by a single MOCVD growth over a selectively etched corrugated substrate, not only provides index guiding for the individual array elements, but also suppresses lateral lasing and amplified spontaneous emission for the entire array. As a result, the entire width of the device is utilized for optical emission, and no additional processing steps are required. Devices tested exhibit uniform emission and show no signs of lateral lasing or amplified spontaneous emission for array widths up to 3.3 times the cavity length. The processing required for device fabrication is therefore minimized by taking advantage of the properties of MOCVD growth over nonplanar substrates.
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