Abstract
In this paper, we approached a novel fabrication for non phosphor white light emitting diodes (LEDs) by the growth of AlGaN/InAlGaN double-hetero structures using by mixed-source hydride vapor phase epitaxy (HVPE) system with multi-sliding boat. It is unique crystal growth technology different from conventional HVPE and metal organic chemical vapor deposition (MOCVD) system using mixed metal source of aluminum, indium and gallium. The characterization of non phosphor white LEDs was examined by photoluminescence (PL) and electroluminescence (EL). The results of EL were found green and yellow emissions as spectrum peaks near 500, 550, and 610 nm definitely. The CIE chromaticity coordinates of white LEDs was measured at injection current 30 mA. Our results are nearly positions; at x = 0.28 and y = 0.31. Even though the LED needs more improved in optical properties, we demonstrated achieving phosphor-free solid-state white lighting.
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