Abstract
CMOS platforms with a high nonlinear figure of merit are highly sought after for high photonic quantum efficiencies, enabling functionalities not possible from purely linear effects and ease of integration with CMOS electronics. Silicon-based platforms have been prolific amongst the suite of advanced nonlinear optical signal processes demonstrated to date. These include crystalline silicon, amorphous silicon, Hydex glass, and stoichiometric silicon nitride. Residing between stoichiometric silicon nitride and amorphous silicon in composition, silicon-rich nitride films of various formulations have emerged recently as promising nonlinear platforms for high nonlinear figure of merit nonlinear optics. Silicon-rich nitride films are compositionally engineered to create bandgaps that are sufficiently large to eliminate two-photon absorption at telecommunications wavelengths while enabling much larger nonlinear waveguide parameters (5x–500x) than those in stoichiometric silicon nitride. This paper reviews recent developments in the field of nonlinear optics using silicon-rich nitride platforms, as well as the outlook and future opportunities in this burgeoning field.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.