Abstract
A correlation between the resistivity-voltage dependences of the hydrogenated SiN/Si(111) films and the photo-induced third-harmonic generation (PITHG) at λ = 1064 nm in the reflected light regime was found. The contribution to the PITHG is both due to linear photo-induced surface changes as well as due to the hydrogen dopants. When the fundamental power density increases to higher than 1.2 GW/cm2, there occurs a drastic decrease of the PITHG. Maximal PITHG changes are observed at a pump-probe delay time about 18 ps and the value of the PITHG slightly increases with the enhanced applied dc-electric field during illumination by a third-harmonic laser beam as a photo-inducing one. The deviation from the tripled frequency wavelength to higher wavelengths substantially suppresses the output PITHG signal. The crucial role of the interface trapping levels and silicon-hydrogen charge transfer is shown.
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