Abstract
Using a theory of front propagation in nonlinear active media we model the on-state spreading related voltage, current and on-state width transients in 90 nm CMOS silicon controlled rectifiers. The model explains well voltage transients during the rising edge of ESD pulses and predicts a non-trivial dependence of device voltage on number of triggering regions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
