Abstract
Evidence for the existence of the intermediate neutral DX state is most likely to be observed in careful photoionization studies; hence, photoionization measurements were made for Si-doped Al x Ga 1-x As. Nonexponential optical ionization transients are observed and are shown to be due simply to the sum of single-exponential processes for the individual DX levels, revealing the difference of the photoionization cross sections for different DX levels. Capacitance-voltage measurements show that the photoionization processes in the depletion region and neutral region are identical
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