Abstract
A new technique of acoustic deep level transient spectroscopy (A-DLTS) using a high-frequency transverse acoustoelectric signal produced by a surface acoustic wave (SAW) electric field was used to study deep centers in semiconductor heterostructures. The basic idea of the presented A-DLTS technique is connected with the fact that the time development of the acoustoelectric response signal arising from the interaction between the SAW electric field and free carriers at heterostructure interface after an injection bias voltage pulse has been applied reflects relaxation processes associated with the thermal recombination of excited carriers moving toward their equilibrium state. The technique of computer evaluation of isothermal acoustoelectric transients applying the date compression algorithms [P. Bury and I. Jamnický, Acta Phys. Slovaca 46, 693–700 (1996)] was used to calculate deep center parameters as activation energies and capture cross sections. The technique has been applied for both Si MIS and GaAs/AlGaAs heterostructures. [Work supported by Grant of Slovak Ministry of Education No. 1/4261/97.]
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