Abstract
Based on the stability of the deep depletion regime in diamond and the outstanding properties of this promising material for its use in power devices, p-channel deep depletion metal oxide semiconductor field effect transistors were fabricated on a (001) Ib nitrogen-doped high pressure high temperature diamond substrate. Taking advantage of the new concept of the non-volatile diamond-based photo switch, it is demonstrated that it is possible to tune the normally-on and normally-off states of the transistor by configuring the pn-junction space charge region. The devices under study was designed following an interdigital-like and a circular-like architectures presenting low threshold voltages (between 3 V and −3 V), an on/off ratio of 107 and a critical electric field numerically assessed of 9 MV.cm−1 at room temperature. This new degree of freedom opens the route for diamond based power electronics.
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