Abstract
Using perovskite oxide films of LaNiO3 as a research object, we demonstrate that the lattice strain has a huge effect on the electron transport properties of the film. The LaNiO3 film was deposited on the PMN-PT substrate, a large change in resistance is generated under the electric field. The substrate will be polarized under an electric field and induced large lattice strain due to the converse piezoelectric effect, the resistivity of the LaNiO3 film is modulated up to three orders of magnitude. Moreover, multiple stable resistance states with endurance properties and good retention can be obtained at room temperature. The modulation on resistive states of LaNiO3 films under an electric field can be used for other oxide films and provides a simple and low energy consumption way to construct multistate resistive memory devices.
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