Abstract
Spin transfer torque based magnetic tunnel junction (STT-MTJ) is under intense investigation for the design of hybrid spintronics/CMOS circuits. A novel non-volatile magnetic decoder (MD) based on MTJs is presented. Its output data is stored into a pair of MTJs in non-volatile state. The proposed MD promises area efficiency by sharing the same sense amplifier for normal CMOS-based dynamic decoder mode and non-volatile data sensing mode. Moreover, the symmetric structure largely weakens the impact of sneak current and ensures reliable sensing. By using a compact STT-MTJ model and the STMicroelectronics CMOS 28 nm design kit for CMOS counterparts, transient and Monte Carlo simulations are performed to validate its functionality and evaluate its performance merits.
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