Abstract
The modulation strategy of injecting non-sinusoidal into reference voltage is presented in this paper. Z-source inductor current ripple and the relationship of voltage gain versus modulation index are analyzed in detail. Compared to simple boost control, the non-sinusoidal injection modulation strategy can obviously decreased the switching times, thus switching loss is cut down, and the voltage stress and Z-source inductor current ripple are obviously reduced. Theoretical analysis, simulation and experimental results are presented to demonstrate the features of the control.
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