Abstract
This article presents a small-signal model of intrinsic gallium nitride high electron mobility transistor (GaN HEMT) for non-quasi-static analysis. The model is derived from the charge-based approach presented in the EPFL HEMT analytical model. The results are obtained in the form of trans-admittance parameters for a two-port network. The model takes into account the current continuity equation in the frequency domain and ignores short-channel effects. The results have been compared in a wide frequency range with technology computer-aided design (TCAD) simulation and show perfect agreement in all operating regions from linear to pinch-off.
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