Abstract
AbstractA theory of non‐linear optical properties of a band charge carrier gas of arbitrary degeneracy due to the influence of a strong electromagnetic radiation on the probability of the carrier scattering by phonons or ionized impurities leading to intraband transitions is developed. A general expression for the polarization created by the carrier response in a laser field in the presence of other electromagnetic fields is obtained at arbitrary temperature and concentration of carriers. The explicit expressions for a generalized dielectric susceptibility tensor and a generalized generation tensor are obtained for all principal scattering mechanisms and arbitrary laser field intensity. The non‐linearity of the absorption coefficient of laser radiation and the dependence of the absorption coefficient of the weak probe wave on the intensity of the laser field are studied.
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