Abstract
With the trend of more transient and efficient semiconductor ignition system, the non-Fourier effect becomes a significant factor for the heat conduction analysis. Based on the Cattaneo–Vernotte model and the transient semiconductor drift-diffusion equations, a coupled two-dimensional model is developed to predict the behavior of carrier transport in electrical field and heat transport in thermal field for semiconductor device. The superimposition and reflection phenomenon of heat propagation are found. The results indicate that the delay of the heat propagation has great influence not only on the temperature field but also on the carrier mobilities which determine the carrier drift-diffusion motions. Additionally, the temperature of the semiconductor device is given at different doping concentrations in the order of 1016 cm−3. Ultimately, the thermoelectrical coupling mechanism is revealed with the consideration of the non-Fourier effect.
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