Abstract
We present an electric characterization method for monitoring dielectrics on miniature 50 μm×70 μm scribe line test sites of semiconductor IC product wafers. The method is an extension to micro-scale of the corona–Kelvin metrology used for much larger sites of about 5 mm in diameter. A miniaturization of the corona charging and of the Kelvin probe is accomplished without a sacrifice in precision or repeatability. The apparatus incorporates a machine vision system for identification of test sites. The micro-testing is demonstrated using advanced gate dielectrics and key electrical parameters, i.e., dielectric capacitance, leakage, dielectric charge and flatband voltage. Monitoring is non-contact and it adds no contaminants or particulates. Therefore, after measurement, the product wafer can be returned to the fab-line for further processing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
