Abstract
SQUIDs using Superconductor-Semiconductor-Superconductor (SSmS) proximity effect Josephson junctions were prepared and noise measurements were carried out. Since SSmS junctions are basic elements of Josephson field effect transistors (JoFETs), information about dynamic properties of JoFETs can be gained in this way. A planar geometry was used for the SSmS junctions, with a single crystalline silicon wafer acting as both, substrate and proximity layer. Rf- and dc-SQUIDs could be realized. When the SQUIDs were operated in a flux locked loop, flux noise values comparable to conventional tunnel junction SQUIDs were measured.
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