Abstract
Noise measurements with a GaAs MESFET employed as a photodetector or as an optoelectronic mixer are reported. Despite its higher noise it is shown that with proper biasing the GaAs MESFET provided a higher carrier-to-noise ratio than a pin photodiode, and as an optoelectronic mixer provided a comparable signal-to-noise ratio to that of a conventional pin and microwave mixer combination. The implications of using GaAs MESFETs in these configurations are discussed.
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