Abstract
A noise theory for the two-tier matrix amplifier is developed that permits the computation of the amplifier's noise figure as a function of the active device and circuit parameters. The computed results based on the noise parameters of a GaAs MESFET with gate dimensions 0.25 mu m*200 mu m are discussed. In addition, a comparative study is done on the performance data from a 2*4 matrix amplifier and its equivalent two-stage distributed amplifier. Finally, the noise characteristics of two 2*4 matrix amplifiers incorporating GaAs MESFETs processed on either ion-implanted or VPE (vapor-phase epitaxial) substrate material are compared with those measured on actual amplifiers. >
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