Abstract
Commercial p+n Ge APD samples from two manufacturers are shown to have comparable noise and responsivity, characterised by a quantum efficiency at 1.3 μm wavelength of 0.7–0.75, and a bulk leakage current density at 20 C of 2−3×10−4 A cm−2 before avalanche multiplication. Surface uniformity of avalanche gain is much better than on earlier n+p devices of the same diameter (100 μm).
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