Abstract

ABSTRACTUndoped and Zn doped InGaN microcrystals were synthesized by a two-step method. The InGaN microcrystals have a wurtzite structure and brownish body color. The InGaN samples prepared at 900°C did not contain a metal In phase. The InGaN:Zn microcrystals showed blue photoluminescence (PL) at 77K different from that of GaN:Zn. Reflectivity and photoluminescence excitation (PLE) measurement showed that the fundamental absorption edge of the InGaN:Zn phosphors is 3.47 eV, which implies that the In content in the InGaN:Zn phosphors is less than 0.2%. GaN:Zn and InGaN:Zn showed a Zn related PLE peak at 3.34 eV. InGaN and InGaN:Zn showed an In related PLE peak at 3.14 eV. When the InGaN:Zn samples were selectively excited at 3.15 eV, an In-related emission band centered at 2.2 eV emerged. The InGaN:Zn phosphors mounted on vacuum fluorescent displays (VFDs) showed room-temperature blue cathodoluminescence (CL) and the CL peak shifted slightly toward the low energy compared to that of the GaN:Zn phosphors because of the superimposed In related band. The InGaN:Zn phosphors had a luminance of 50 cd/m2 and a luminance efficiency of 0.03 lm/W at an anode voltage of 50 V.

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