Abstract
Thin (11.4 nm) gate quality silicon dioxide films were subjected to high-temperature (850–1150 °C) rapid thermal nitridation cycles in ultrapure ammonia. Secondary-ion mass spectroscopy and neutron depth profiling results indicate a significant level of nitrogen diffusion into the silicon substrate. After stripping the dielectric layers, Schottky diode studies were performed using an electrolyte-based technique. We found, for the first time, the formation of nitridation-induced ultrathin (less than 60 nm) n-type layers at the top surface of nominally p-type silicon substrates used in the study. A nitrogen-oxygen donor complex formation mechanism is invoked to explain the presence of the ultrathin n-type layers.
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