Next Generation Photovoltaics Based on Multiple Exciton Generation in Quantum Dot Solar Cells

Abstract

Next Generation solar cells based onMultiple Exciton Generation (MEG) in semiconductorquantum dots (QDs) are described. This application of QDs depends upon efficient MEG in QDs incorporated into PV cells, followed by efficient exciton splitting into free electrons and holes and their efficient separation and collection in the cell contacts to produce multiple free carriers per absorbed photon. Using time-resolved transient absorption, bleaching, photoluminescence and THz spectroscopy, MEG has been initially confirmed in several Group IV-VI, III-V, II-VI, and IV colloidal semiconductor QDs. Some controversy using these techniques have now been attributed to effects of the variable of the QD surface chemisty and under certain conditions to artifacts arising from long-lived trapping of photoinduced charge; in our opinion these controversies have been resolved and are discussed here. Furthermore, various photovoltaic cell architectures utilizing QDs have recently been constructed and the photocurrent and photovoltage characterisitics have been studied. These photocurrent measurements provide a more direct measurement of MEG since the photogenerated carriers are counted directly via the current, and they are very consistent with the QYs of MEG reported using the proper spectroscopic techniques; thus, these new photocurrent measurements confirm the existence of enhanced exciton and carrier multiplication in QDs. The past work and prognosis for QD-based Next Generation PV cells based on MEG are discussed.KeywordsSolar CellPower Conversion EfficiencyBulk SemiconductorSchottky JunctionMultiple Exciton GenerationThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.