Abstract
High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment.
Highlights
High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the generation of photonic and electronic devices
By using the tailored tree-like structure shown in Figure 2c we have demonstrated for the first time (Figure 3a) that the SiGe composition (shown on the graph as I(SiGe)/I(GeGe)) can be engineered to a near constant value along the central strip of the tree-like structure, with the graded composition characteristics previously demonstrated in straight strips appearing only in the branches of the tree
This has been confirmed by comparing secondary ion mass spectrometry (SIMS) composition data to Iratio for some blanket SiGe on Si samples, grown using reduced pressure chemical vapour deposition (RPCVD), with compositions in the range 0.75, x, 1
Summary
High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the generation of photonic and electronic devices. RMG is very attractive for the heterogeneous integration of SiGe based devices on insulator for electronics and photonics applications because it is possible to grow defect-free single crystal material, by the mechanism shown, with the condition that the regrowth propagation speed is sufficient enough to avoid random nucleation in the liquid ahead of the epitaxial growth front[20]. This high material quality can lead to significant improvements in device characteristics such as leakage current and quantum efficiency. Inset is a plot of the Raman Iratio as a function of distance from the seed for a range of anneal temperatures from which the average Iratio values were calculated
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